ماسفت JS60R080WUCR-TO247
MOSFET
۶۰۰V CoolMOS™ P7 Power Transistor
The CoolMOS™ ۷th generation platform is a revolutionary technology for
high voltage power MOSFETs, designed according to the superjunction
(SJ) principle and pioneered by Infineon Technologies. The 600V
CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It
combines the benefits of a fast switching SJ MOSFET with excellent ease
of use, e.g. very low ringing tendency, outstanding robustness of body
diode against hard commutation and excellent ESD capability.
Furthermore, extremely low switching and conduction losses make
switching applications even more efficient, more compact and much
cooler.
Features
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2kV (HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
low RDS(on)*A (below 1Ohm*mm²)
Benefits
• Ease of use and fast design-in through low ringing tendency and usage
across PFC and PWM stages
• Simplified thermal management due to low switching and conduction
losses
• Increased power density solutions enabled by using products with
smaller footprint and higher manufacturing quality due to >2 kV ESD
protection
• Suitable for a wide variety of applications and power ranges
Potential applications
PFC stages, hard switching PWM stages and resonant switching stages
for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom
and UPS.
Product Validation: Qualified for industrial applications according to the
relevant tests of JEDEC47/20/22
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 80 mW
Qg,typ 51 nC
ID,pulse 110 A
Eoss @ 400V 5.5 μJ
Body diode diF/dt 900 A/μs
Type / Ordering Code Package Marking Related Links
IPZA60R080P7 PG-TO 247-4-3 60R080P7 see Appendix A
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