ماسفت IRF7309 SMD

 Type Designator: IRF7309
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 1.4 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SO8