ماسفت IRF640 اورجینال

 Specification

Product Category: MOSFET
RoHS: No
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 18 A
Rds On – Drain-Source Resistance: 180 mOhms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Fall Time: 36 ns
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 125 W
Rise Time: 51 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 14 ns
Width: 4.7 mm
Unit Weight: 6 g